| 摘要 |
PROBLEM TO BE SOLVED: To obtain an ultra-thin high-emitting diode of a structure, wherein the generation of a defective ohmic electrode is inhibited, and an epitaxial wafer for the light-emitting diode. SOLUTION: This epitaxial wafer has a structure, such that epitaxial layers 3 to 6 are formed on the main surface of a compound semiconductor single- crystal substrate 2. In this case, the epitaxial layer 3a of the epitaxial layer 3 on the main surface is exposed on the side of the rear of the substrate 2, and the carrier concentration in the exposed part 8 of the epitaxial part 3a is 1×10<17> cm<-3> to 2×10<18> cm<-3> . |
