| 摘要 |
<P>PROBLEM TO BE SOLVED: To introduce a power semiconductor substrate having a slight deflection, and to present a simple and inexpensive method of manufacturing such a power semiconductor device. <P>SOLUTION: At least one sequence layer, which comprises thin adhesion mediation layers (20, 22, 24), sintered metal layers (30, 32, 34), and wiring layers (40, 42, 44), is arranged on at least one of main surfaces (120, 122) in a flat insulating base body (12). An auxiliary method includes four main steps, namely a step for covering at least a partial surface of at least one main surface in the flat insulating base body, a step for arranging a paste-like layer made of sintered metal and a solvent on the partial or entire surface of the adhesion mediation layer, a step for arranging the wiring layer on the sintered metal layer, and a step for energizing the wiring layer on the power semiconductor substrate (10) with pressure. <P>COPYRIGHT: (C)2009,JPO&INPIT |
