| 摘要 |
PROBLEM TO BE SOLVED: To provide a solid-state imaging device capable of appropriately suppressing the decrease of electric charges to be handled even in the case of a contracted pixel structure in the transfer of signal charges with the aid of the potential gradient formed between transfer electrodes. SOLUTION: The solid-state imaging device has transfer electrodes which are located to be parallel to each other with an insulating film 11 on a substrate 10 in between the two, and are oriented to face the direction to bisect the transfer direction (arrow A3). The electrodes transfer the signal charges representing the optical image of an object in the transfer direction upon being supplied with a driving voltage through terminals H1 and H2. The signal charge transfer is performed by utilizing the potential gradient formed between the transfer electrodes. The transfer electrodes are different from each other in work function, that is, the first electrode 12 is built of an n-type polycrystalline silicon and the second electrode 14 is built of a p-type polycrystalline silicon. COPYRIGHT: (C)2005,JPO&NCIPI
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