| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a manufacturing method of a GaN compound semiconductor crystal for preventing the occurrence of abnormal growth and discolouration in a direction other than a C-axis direction in a growth crystal, in a method for growing the GaN compound semiconductor crystal on a compound semiconductor substrate, and to provide the GaN compound semiconductor crystal of good quality which is obtained by the manufacturing method. <P>SOLUTION: When the GaN compound semiconductor crystal is epitaxially grown, the substrate where a diffraction angle (2θ) at which a diffraction peak by an X-ray diffraction method appears is within a prescribed range, to put it concretely, NdGaO<SB>3</SB>where a position of the diffraction peak is 40.200° to 40.400° is used. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
