| 发明名称 |
PHOTOMASK AND METHOD FOR PHOTOLITHOGRAPHIC PATTERNING OF A SUBSTRATE BY USE OF PHASE SHIFTED ASSIST FEATURES |
| 摘要 |
A photomask and method of patterning a photosensitive layer using a photomask, the photomask including a substrate and a film coupled to substrate. The film is etched with a phase shifted assist feature, a low aspect ratio assist feature or phase shifted low aspect primary features. |
| 申请公布号 |
EP1488284(B1) |
申请公布日期 |
2006.12.20 |
| 申请号 |
EP20030711440 |
申请日期 |
2003.03.06 |
| 申请人 |
INTEL CORPORATION |
发明人 |
SCHENKER, RICHARD;ALLEN, GARY |
| 分类号 |
G03F1/00;G03F1/26;G03F1/32;G03F7/00;G03F7/20;G06F17/50;H01L23/58;H01L29/06 |
主分类号 |
G03F1/00 |
| 代理机构 |
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