发明名称 |
ATOMIC LAYER DEPOSITION APPARATUS |
摘要 |
Disclosed is a large area atomic layer deposition apparatus capable of processing a large area substrate. The large area atomic layer deposition apparatus includes: a process chamber; a susceptor which is installed inside the process chamber, wherein a plurality of substrates are disposed in a circular shape; and a gas supply part which is installed on the susceptor and is formed to circulate and flow deposition gas along a circumferential direction of the susceptor. |
申请公布号 |
KR20160093388(A) |
申请公布日期 |
2016.08.08 |
申请号 |
KR20150014325 |
申请日期 |
2015.01.29 |
申请人 |
K.C.TECH CO., LTD. |
发明人 |
PARK, SUNG HYEON;SHIN, IN CHEOL;LEE, KEUN WOO;KIM, KYUNG JOON |
分类号 |
H01L21/02;H01L21/205;H01L21/683 |
主分类号 |
H01L21/02 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|