发明名称 ATOMIC LAYER DEPOSITION APPARATUS
摘要 Disclosed is a large area atomic layer deposition apparatus capable of processing a large area substrate. The large area atomic layer deposition apparatus includes: a process chamber; a susceptor which is installed inside the process chamber, wherein a plurality of substrates are disposed in a circular shape; and a gas supply part which is installed on the susceptor and is formed to circulate and flow deposition gas along a circumferential direction of the susceptor.
申请公布号 KR20160093388(A) 申请公布日期 2016.08.08
申请号 KR20150014325 申请日期 2015.01.29
申请人 K.C.TECH CO., LTD. 发明人 PARK, SUNG HYEON;SHIN, IN CHEOL;LEE, KEUN WOO;KIM, KYUNG JOON
分类号 H01L21/02;H01L21/205;H01L21/683 主分类号 H01L21/02
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