| 发明名称 | Semiconductor device manufacturing method and substrate treatment system | ||
| 摘要 | A semiconductor device manufacturing method that includes: forming a gate insulating film containing a hafnium oxide and a zirconium oxide on a workpiece having a source, a drain and a channel; and subjecting the gate insulating film to a crystallization heat treatment at a temperature of 600 degrees C. or less is provided. The gate insulating film subjected to the crystallization heat treatment has a relative permittivity of 27 or more. | ||
| 申请公布号 | US9418837(B2) | 申请公布日期 | 2016.08.16 |
| 申请号 | US201414504915 | 申请日期 | 2014.10.02 |
| 申请人 | TOKYO ELECTRON LIMITED | 发明人 | Akiyama Koji;Higashijima Hirokazu;Tamura Chihiro;Aoyama Shintaro;Wamura Yu |
| 分类号 | H01L21/02;C23C16/56;H01L21/67;C23C16/40;H01L21/28;H01L29/51;C23C16/06;C23C16/46;C23C16/52;H01L29/40;H01L49/02 | 主分类号 | H01L21/02 |
| 代理机构 | Nath, Goldberg & Meyer | 代理人 | Nath, Goldberg & Meyer ;Meyer Jerald L. |
| 主权项 | 1. A semiconductor device manufacturing method, comprising: forming a gate insulating film containing a mixture of a hafnium oxide film and a zirconium oxide film on a workpiece having a source, a drain and a channel; and subjecting the gate insulating film to a crystallization heat treatment at a temperature of 600 degrees C. or less, wherein the content of the hafnium oxide film in the gate insulating film is 5 mol % to 30 mol % and the gate insulating film subjected to the crystallization heat treatment has a relative permittivity of 27 or more. | ||
| 地址 | Tokyo JP | ||