发明名称 ARRAY SUBSTRATE, MANUFACTURING METHOD THEREOF AND DISPLAY DEVICE
摘要 An array substrate, a manufacturing method thereof and a display device are disclosed. The array substrate comprises: a base substrate (1), thin-film transistors (TFTs), an isolation layer (10) and an organic resin layer (8) formed on the base substrate (1), and a common electrode layer (12) formed on the organic resin layer (8). The isolation layer (10) covers source electrodes (6) and drain electrodes (7) of the TFTs; the organic resin layer (8) covers the isolation layer (10) and is provided with first through holes (9) corresponding to the drain electrodes (7) of the TFTs; the isolation layer (10) is provided with second through holes (11) communicated with the first through holes (9) to expose partial drain electrodes (7); and the dimension of the second through holes (11) is greater than that of the first through holes (9). The array substrate, the manufacturing method thereof and the display device resolve the problem of forming dark dots, ensure the product quality, reduce the waste of production materials, and reduce the production cost.
申请公布号 US2016247835(A1) 申请公布日期 2016.08.25
申请号 US201414769658 申请日期 2014.10.24
申请人 BOE TECHNOLOGY GROUP CO., LTD. ;BEIJING BOE OPTOELECTRONICS TECHNOLOGY CO., LTD. 发明人 JIANG Xiaohui;YAN Changjiang;ZHANG Jiaxiang
分类号 H01L27/12;H01L21/768;H01L21/311 主分类号 H01L27/12
代理机构 代理人
主权项 1. An array substrate, comprising: a base substrate, thin-film transistors (TFTs), an isolation layer and an organic resin layer formed on the base substrate, and a common electrode layer formed on the organic resin layer, wherein the isolation layer covers source electrodes and drain electrodes of the TFTs; the organic resin layer covers the isolation layer and are provided with first through holes corresponding to the drain electrodes of the TFTs; the isolation layer is provided with second through holes communicated with the first through holes to expose partial drain electrodes; and the dimension of the second through holes is greater than that of the first through holes.
地址 Beijing CN