发明名称 Electronic circuit having adjustable transistor device
摘要 A transistor device includes at least one first type transistor cell including a drift region, a source region, a body region arranged between the source region and the drift region, a drain region, a gate electrode adjacent the body region and dielectrically insulated from the body region by a gate dielectric, and a field electrode adjacent the drift region and dielectrically insulated from the drift region by a field electrode dielectric. A gate terminal is coupled to the gate electrode, a source terminal is coupled to the source region, and a control terminal is configured to receive a control signal. A variable resistor is connected between the field electrode and the gate terminal or the source terminal. The variable resistor includes a variable resistance configured to be adjusted by the control signal received at the control terminal.
申请公布号 US9431392(B2) 申请公布日期 2016.08.30
申请号 US201313837292 申请日期 2013.03.15
申请人 Infineon Technologies Austria AG 发明人 Rieger Walter;Weber Hans;Treu Michael;Nöbauer Gerhard;Pölzl Martin;Vielemeyer Martin;Hirler Franz
分类号 H01L29/66;H01L21/70;H01L27/06;H01L29/40;H01L29/78;H01L29/06 主分类号 H01L29/66
代理机构 Murphy, Bilak & Homiller, PLLC 代理人 Murphy, Bilak & Homiller, PLLC
主权项 1. An electronic circuit, comprising: a drive circuit; and a transistor device comprising: at least one first type transistor cell comprising a drift region, a source region, a body region arranged between the source region and the drift region, a drain region, a gate electrode adjacent to the body region and dielectrically insulated from the body region by a gate dielectric, and a field electrode adjacent to the drift region and dielectrically insulated from the drift region by a field electrode dielectric;a gate terminal coupled to the gate electrode of the at least one first type transistor cell, a source terminal coupled to the source region of the at least one first type transistor cell, and a control terminal configured to receive a control signal;a variable resistor connected between the field electrode of the at least one first type transistor cell and one of the gate terminal and the source terminal, wherein the variable resistor comprises a variable resistance that is configured to be adjusted through the control signal received at the control terminal; anda first switch connected in series with the variable resistor, such that the variable resistor and the first switch are connected in series between the field electrode and the one of the gate terminal and the source terminal, wherein the first switch is configured to be driven dependent on a drive signal received at the gate terminal of the transistor device, wherein the drive circuit is coupled to the gate terminal and the control terminal of the transistor device and is configured to generate the control signal so as to adjust the variable resistance of the variable resistor, based on a load condition of the transistor device, so that the variable resistance is dependent on the load condition.
地址 Villach AT