发明名称 Semiconductor wafer evaluation method, semiconductor wafer evaluation device, and probe for semiconductor evaluation device
摘要 Provided is a semiconductor wafer evaluation method of performing an evaluation of electrical characteristics of a semiconductor wafer by bringing mercury into contact with a surface of the semiconductor wafer, the method including using a probe constituted of a fixed electrode having a tip end portion and a transparent covering portion that covers a portion other than the tip end portion of the fixed electrode, the fixed electrode being made of a metal having stronger wettability with respect to the mercury than the semiconductor wafer and the covering portion, and measuring the electrical characteristics by attaching the mercury to the tip end portion of the fixed electrode and then bringing the mercury into contact with the surface of the semiconductor wafer.
申请公布号 US9431307(B2) 申请公布日期 2016.08.30
申请号 US201313936573 申请日期 2013.07.08
申请人 SHOWA DENKO K.K. 发明人 Okano Taichi
分类号 H01L21/00;H01L21/66;G01R1/067;G01R31/26 主分类号 H01L21/00
代理机构 Sughrue Mion, PLLC 代理人 Sughrue Mion, PLLC
主权项 1. A semiconductor wafer evaluation method of performing an evaluation of electrical characteristics of a semiconductor wafer by bringing mercury into contact with a surface of the semiconductor wafer, the method comprising: using a probe constituted of a fixed electrode having a tip end portion and a transparent covering portion that covers a portion other than the tip end portion of the fixed electrode, the fixed electrode being made of a metal having stronger wettability with respect to the mercury than the semiconductor wafer and the covering portion; and measuring the electrical characteristics by attaching the mercury to the tip end portion of the fixed electrode and then bringing only the mercury into contact with the surface of the semiconductor wafer, wherein the fixed electrode is solid.
地址 Tokyo JP