| 发明名称 | Semiconductor device and manufacturing method therefor | ||
| 摘要 | A semiconductor device manufacturing method is disclosed by which electron beam irradiation is accomplished at a low cost while exhibiting uniform characteristics. A wafer stack consisting of multiple stacked wafers is irradiated with an electron beam from both the front surface and reverse surface. As such, a semiconductor device manufacturing method is provided whereby the electrical characteristics are extremely uniform between wafers, and costs are reduced by reducing the number of electron beam irradiations. | ||
| 申请公布号 | US9431290(B2) | 申请公布日期 | 2016.08.30 |
| 申请号 | US201514731027 | 申请日期 | 2015.06.04 |
| 申请人 | FUJI ELECTRIC CO., LTD. | 发明人 | Niimura Yasushi |
| 分类号 | H01L21/26;H01L21/42;H01L21/765;H01L21/263;H01L21/28;H01L21/265;H01L29/06;H01L21/66 | 主分类号 | H01L21/26 |
| 代理机构 | Rossi, Kimms & McDowell LLP | 代理人 | Rossi, Kimms & McDowell LLP |
| 主权项 | 1. A method of manufacturing a semiconductor device by implementing electron beam irradiation from principal surfaces of a wafer stack formed of two or more stacked semiconductor substrates, the method comprising: a first irradiation step of implementing electron beam irradiation from one principal surface of the wafer stack; and a second irradiation step of implementing electron beam irradiation from the other principal surface of the wafer stack. | ||
| 地址 | Kawasaki-shi JP | ||