Plasma processing method and apparatus

摘要

A plasma processing method to a substrate includes a first step of mounting a transfer carrier holding the substrate on a stage which is cooled and provided within a processing chamber; a second step of relatively moving the stage and a cover provided above the stage to cover a holding sheet and an annular frame of the transfer carrier with the substrate exposed from a window part formed at the cover, a third step of carrying out plasma processing on the substrate, a fourth step of cooling the cover, and a fifth step of unloading the transfer carrier holding the substrate from the processing chamber.

主权项

1. A plasma processing method of carrying out plasma processing within a processing chamber on a substrate which is held by a transfer carrier constituted of an annular frame and a holding sheet, the method comprising:
a first step of mounting the transfer carrier holding the substrate on a stage which is cooled and provided within the processing chamber; a second step of changing a distance between the stage and a cover provided above the stage to cover the holding sheet and the frame of the transfer carrier by the cover in a state of exposing the substrate from a window part formed at the cover; a third step of carrying out plasma processing on the substrate held by the transfer carrier; a fourth step of cooling the cover; and a fifth step of unloading the transfer carrier holding the substrate from the processing chamber, wherein in the fourth step, heat transfer gas is introduced to the processing chamber to cool the cover while the heat transfer gas is exhausted by a pressure reducing mechanism.