| 发明名称 | PBNZT ferroelectric film, sol-gel solution, film forming method and method for producing ferroelectric film | ||
| 摘要 | To provide a PBNZT ferroelectric film capable of preventing sufficiently oxygen ion deficiency. The PBNZT ferroelectric film according to an embodiment of the present invention is a ferroelectric film including a perovskite-structured ferroelectric substance represented by ABO3, wherein the perovskite-structured ferroelectric substance is a PZT-based ferroelectric substance containing Pb2+ as A-site ions and containing Zr4+ and Ti4+ as B-site ions, and the A-site contains Bi3+ as A-site compensation ions and the B-site contains Nb5+ as B-site compensation ions. | ||
| 申请公布号 | US9431242(B2) | 申请公布日期 | 2016.08.30 |
| 申请号 | US201013522824 | 申请日期 | 2010.07.23 |
| 申请人 | YOUTEC CO., LTD. | 发明人 | Kijima Takeshi;Honda Yuuji |
| 分类号 | H01L41/00;H02N2/00;H01L21/02;C01G23/00;C01G33/00;C23C18/12 | 主分类号 | H01L41/00 |
| 代理机构 | Wenderoth, Lind & Ponack, L.L.P. | 代理人 | Wenderoth, Lind & Ponack, L.L.P. |
| 主权项 | 1. A PBNZT ferroelectric film that is a ferroelectric film comprising a perovskite-structured ferroelectric substance represented by (Pb1-XBiX)((TiZr)1-YNbY)O3, wherein: X is 0.05 to 0.1; and Y is 0.05 to 0.1. | ||
| 地址 | Chiba JP | ||