发明名称 Optical device and method for manufacturing same
摘要 Provided are an optical device and a method for manufacturing same. The optical device according to the present invention including: a transparent amorphous substrate; a current injection layer formed on the substrate; a graphite layer formed on the current injection layer; and a semiconductor unit formed on the graphite layer, wherein the semiconductor unit is formed after forming the graphite layer on the amorphous substrate, thereby overcoming the problems of conventional methods that involve forming a semiconductor unit on an amorphous substrate, and the semiconductor unit of the present invention has superior crystallinity.
申请公布号 US9444006(B2) 申请公布日期 2016.09.13
申请号 US201214117613 申请日期 2012.08.14
申请人 SNU R&DB FOUNDATION 发明人 Yi Gyuchul;Chung Kunook
分类号 H01L33/00;H01L33/24;H01L33/32;H01L33/08 主分类号 H01L33/00
代理机构 Revolution IP, PLLC 代理人 Revolution IP, PLLC
主权项 1. An optical device comprising: a substrate; a graphite layer formed on the substrate; a semiconductor unit formed on the graphite layer; and an optical device layer comprising a first optical device layer and a second optical device layer formed on a surface of the semiconductor unit, a n-type semiconductor and an n-type semiconductor being alternatively formed with respect to the first layer and the second layer, wherein the optical device layer is formed to surround the semiconductor unit by stacking of the first optical device layer and the second optical device layer, and wherein if the semiconductor unit comprises a plurality of semiconductor units, the first optical device layer is formed either to surround each of the semiconductor units and the second optical device layer is formed as a thin film to cover the first optical device layer or the first optical device layer is formed as a thin film to cover each of the semiconductor units and the second optical device layer is formed as a thin film by stacking on the first optical device layer.
地址 Seoul KR