发明名称 Method of manufacturing semiconductor device and semiconductor device
摘要 Characteristics of a semiconductor device are improved. An opening that exposes a pad region of a top-layer wiring containing aluminum is formed in a protection film over the wiring, and aluminum nitride is formed on a surface of the exposed wiring. Additionally, a silicon nitride film is formed on a back surface of a semiconductor substrate having the wiring. As described above, foreign substances generated over the pad region due to the silicon nitride film on the back surface of the semiconductor substrate can be prevented by providing an aluminum nitride film over the pad region. Particularly, even in a case of requiring time before an inspection step and a bonding step, after a formation step of the pad region, formation reaction of the foreign substances can be prevented in the pad region, and the characteristics of the semiconductor device can be improved.
申请公布号 US9443817(B2) 申请公布日期 2016.09.13
申请号 US201514592730 申请日期 2015.01.08
申请人 Renesas Electronics Corporation 发明人 Okumura Ayaka;Hotta Katsuhiko;Kondo Yoshinori;Osaka Hiroaki
分类号 H01L23/00;H01L21/66;H01L23/522;H01L21/02;H01L23/532;H01L27/092;H01L21/321;H01L21/768 主分类号 H01L23/00
代理机构 McGinn IP Law Group, PLLC 代理人 McGinn IP Law Group, PLLC
主权项 1. A method of manufacturing a semiconductor device, comprising: forming a silicon nitride film above a surface of a semiconductor substrate; forming a first wiring above the silicon nitride film; forming a first insulating film over the first wiring; forming a second wiring containing aluminum over the first wiring via the first insulating film; forming a second insulating film over the second wiring; forming an opening that exposes a part of the second wiring by removing the second insulating film over the second wiring; and after the forming of the opening, forming aluminum nitride on a surface of the exposed second wiring, wherein the forming of the silicon nitride film comprises forming the silicon nitride film on a back surface of the semiconductor substrate, wherein the forming of the second wiring comprises forming the second wiring by etching a conductive film containing aluminum, and wherein the method further comprises: after the forming of the second wiring and before the forming of the second insulating film, forming aluminum oxide on side walls of the second wiring.
地址 Kawasaki-shi, Kanagawa JP