发明名称 |
DRIVER USING PULL-UP NMOS TRANSISTOR |
摘要 |
In one embodiment, a system comprises a pre-driver circuit and a driver. The pre-driver circuit is powered by a first supply voltage, and configured to output a pre-drive signal. The driver comprises a pull-up NMOS transistor having a drain coupled to a second supply voltage, and a source coupled to an output of the driver, wherein the second supply voltage is lower than the first supply voltage by at least a threshold voltage of the pull-up NMOS transistor. The driver also comprises a drive circuit coupled to a gate of the pull-up NMOS transistor, wherein the drive circuit is configured to receive the pre-drive signal and to drive the gate of the pull-up NMOS transistor with a voltage approximately equal to the first supply voltage to drive the output of the driver to a high state depending on a logic state of the pre-drive signal. |
申请公布号 |
US2016285453(A1) |
申请公布日期 |
2016.09.29 |
申请号 |
US201514957188 |
申请日期 |
2015.12.02 |
申请人 |
QUALCOMM Incorporated |
发明人 |
Thilenius Stephen Clifford;Isakanian Patrick;Loke Alvin Leng Sun;Bryan Thomas Clark;Peterson LuVerne Ray |
分类号 |
H03K19/0175;H03K5/14 |
主分类号 |
H03K19/0175 |
代理机构 |
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代理人 |
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主权项 |
1. A system, comprising:
a pre-driver circuit powered by a first supply voltage, and configured to output a pre-drive signal; and a driver, the driver comprising:
a pull-up NMOS transistor having a drain coupled to a second supply voltage, and a source coupled to an output of the driver, wherein the second supply voltage is lower than the first supply voltage by at least a threshold voltage of the pull-up NMOS transistor; anda drive circuit coupled to a gate of the pull-up NMOS transistor, wherein the drive circuit is configured to receive the pre-drive signal and to drive the gate of the pull-up NMOS transistor with a voltage approximately equal to the first supply voltage to drive the output of the driver to a high state depending on a logic state of the pre-drive signal. |
地址 |
San Diego CA US |