发明名称 DRIVER USING PULL-UP NMOS TRANSISTOR
摘要 In one embodiment, a system comprises a pre-driver circuit and a driver. The pre-driver circuit is powered by a first supply voltage, and configured to output a pre-drive signal. The driver comprises a pull-up NMOS transistor having a drain coupled to a second supply voltage, and a source coupled to an output of the driver, wherein the second supply voltage is lower than the first supply voltage by at least a threshold voltage of the pull-up NMOS transistor. The driver also comprises a drive circuit coupled to a gate of the pull-up NMOS transistor, wherein the drive circuit is configured to receive the pre-drive signal and to drive the gate of the pull-up NMOS transistor with a voltage approximately equal to the first supply voltage to drive the output of the driver to a high state depending on a logic state of the pre-drive signal.
申请公布号 US2016285453(A1) 申请公布日期 2016.09.29
申请号 US201514957188 申请日期 2015.12.02
申请人 QUALCOMM Incorporated 发明人 Thilenius Stephen Clifford;Isakanian Patrick;Loke Alvin Leng Sun;Bryan Thomas Clark;Peterson LuVerne Ray
分类号 H03K19/0175;H03K5/14 主分类号 H03K19/0175
代理机构 代理人
主权项 1. A system, comprising: a pre-driver circuit powered by a first supply voltage, and configured to output a pre-drive signal; and a driver, the driver comprising: a pull-up NMOS transistor having a drain coupled to a second supply voltage, and a source coupled to an output of the driver, wherein the second supply voltage is lower than the first supply voltage by at least a threshold voltage of the pull-up NMOS transistor; anda drive circuit coupled to a gate of the pull-up NMOS transistor, wherein the drive circuit is configured to receive the pre-drive signal and to drive the gate of the pull-up NMOS transistor with a voltage approximately equal to the first supply voltage to drive the output of the driver to a high state depending on a logic state of the pre-drive signal.
地址 San Diego CA US