| 摘要 |
The invention relates to an edge-emitting semiconductor laser (1) having at least one active layer (5) and two waveguide layers (4, 10), wherein the active layer is arranged between the waveguide layers, wherein the active layer is designed to produce electromagnetic radiation, and wherein a tunnel contact layer (8, 9) is arranged between the two waveguide layers, wherein the tunnel contact layer has a negatively doped layer (9) and a positively doped layer (8), wherein the active layer (5) adjoins a third waveguide layer (6), and wherein the third waveguide layer (6) is arranged between the active layer (5) and the tunnel contact layer (8, 9). Furthermore, an electron blocking layer (7) may also be present between the tunnel contact and the third waveguide layer. The semiconductor laser can be produced on the basis of InGaAlN. |
