| 摘要 |
PROBLEM TO BE SOLVED: To improve the electrical characteristics of a transistor by adjusting the physical property values of an oxide semiconductor layer, since the correlation of the electrical characteristics of a transistor using an oxide semiconductor layer, and the physical property values of the oxide semiconductor layer is not clear yet, because the field of an oxide semiconductor layer is a field began to receive attention in recent years.SOLUTION: A semiconductor device has at least a gate electrode, an oxide semiconductor layer, and a gate insulation layer sandwiched between the gate electrode and oxide semiconductor layer, where the oxide semiconductor layer has a relative dielectric constant of 13 or more (or 14 or more).SELECTED DRAWING: Figure 2 |
