| 摘要 |
PROBLEM TO BE SOLVED: To achieve a nitride semiconductor light emitting element which can emit light at a low operation voltage despite of inhibiting deterioration in light extraction efficiency.SOLUTION: A semiconductor light emitting element includes: a support substrate; a semiconductor layer; a first electrode formed on a surface closer to the support substrate out of surfaces of the semiconductor layer; a second electrode formed on a surface on the side opposite to the side where the first electrode is formed out of the surfaces of the semiconductor layer; and a conductive protection layer formed on a surface out of surfaces of the first electrode on the side opposite to the side where the semiconductor layer is formed. The semiconductor layer is composed of a nitride semiconductor; and the protection layer is formed to include a metallic material having a melting point higher than that of Ag; and the first electrode is composed of Ag alloy containing Ge and Cu.SELECTED DRAWING: Figure 1 |
