发明名称 Si-based-alloy anode material
摘要 Disclosed is a Si-based alloy anode material for lithium ion secondary batteries, including an alloy phase with a Si principal phase including Si and a compound phase including two or more elements, which includes a first additional element A selected from Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zr, Nb and Mg and a low-melting second additional element B selected from S, Se, Te, Sn, In, Ga, Pb, Bi, Zn, Al. This compound phase includes (i) a first compound phase including Si and the first additional element A; a second compound phase including the first additional element A and the second additional element B; and one or both of a third compound phase including two or more of the second additional elements B and a single phase of the second additional element B.
申请公布号 US9508990(B2) 申请公布日期 2016.11.29
申请号 US201314346112 申请日期 2013.01.30
申请人 Sanyo Special Steel Co., Ltd. 发明人 Hirono Tomoki;Kariya Tetsuro;Sawada Toshiyuki
分类号 H01M4/88;H01M4/38;H01M10/0525;C22C9/00;C22C9/02;C22C9/04;C22C28/00;H01M4/134 主分类号 H01M4/88
代理机构 The Webb Law Firm 代理人 The Webb Law Firm
主权项 1. A Si-based alloy anode material for lithium ion secondary batteries, comprising an alloy phase composed of a Si principal phase comprising Si and a compound phase consisting of two or more elements, wherein the two or more elements comprise a first additional element A being at least one selected from the group consisting of Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zr, Nb and Mg and a low-melting second additional element B being at least one selected from the group consisting of S, Se, Te, Sn, In, Ga, Pb, Bi, Zn, and Al, wherein the compound phase consists of: a first compound phase comprising Si and the first additional element A; a second compound phase comprising the first additional element A and the second additional element B; and one or both of a third compound phase comprising two or more of the second additional elements B and a single phase of the second additional element B, or, alternatively, consists of: a compound phase comprising Si and the first additional element A; and a compound phase comprising two or more of the second additional elements B and optionally a single phase of the second additional element B, and wherein the Si principal phase has an average minor axis width of 4 μm or less.
地址 Himeji-shi JP