Method of selectively transferring semiconductor device

摘要

A method of selectively transferring semiconductor devices comprises the steps of providing a substrate having a first surface and a second surface; providing a plurality of semiconductor epitaxial stacks on the first surface, wherein each of the plurality of semiconductor epitaxial stacks comprises a first semiconductor epitaxial stack and a second semiconductor epitaxial stack, and the first semiconductor epitaxial stack is apart from the second semiconductor epitaxial stack, and wherein a adhesion between the first semiconductor epitaxial stack and the substrate is different from a adhesion between the second semiconductor epitaxial stack and the substrate; and selectively separating the first semiconductor epitaxial stack or the second semiconductor epitaxial stack from the substrate.

主权项

1. A method of selectively transferring semiconductor devices, comprising the steps of:
step a: providing a substrate having a first surface and a second surface; step b: providing a plurality of semiconductor epitaxial stacks on the first surface, wherein each of the plurality of semiconductor epitaxial stacks comprises a first semiconductor epitaxial stack and a second semiconductor epitaxial stack, and the first semiconductor epitaxial stack is apart from the second semiconductor epitaxial stack, and wherein an adhesion between the first semiconductor epitaxial stack and the substrate is different from an adhesion between the second semiconductor epitaxial stack and the substrate; and step c: selectively separating the first semiconductor epitaxial stack or the second semiconductor epitaxial stack from the substrate.