发明名称 |
Method for manufacturing nano-structured semiconductor light-emitting element |
摘要 |
There is provided a method for manufacturing a nanostructure semiconductor light emitting device, including: forming a mask having a plurality of openings on a base layer; growing a first conductivity-type semiconductor layer on exposed regions of the base layer such that the plurality of openings are filled, to form a plurality of nanocores; partially removing the mask such that side surfaces of the plurality of nanocores are exposed; heat-treating the plurality of nanocores after partially removing the mask; sequentially growing an active layer and a second conductivity-type semiconductor layer on surfaces of the plurality of nanocores to form a plurality of light emitting nanostructures, after the heat treatment; and planarizing upper parts of the plurality of light emitting nanostructures such that upper surfaces of the nanocores are exposed. |
申请公布号 |
US9508893(B2) |
申请公布日期 |
2016.11.29 |
申请号 |
US201414764484 |
申请日期 |
2014.01.28 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
Cha Nam-Goo;Kim Dong-Ho;Yoo Geon-Wook |
分类号 |
H01L33/00;H01L33/44;H01L33/08;H01L33/18;H01L33/24;H01L33/36;H01L33/06;H01L33/38 |
主分类号 |
H01L33/00 |
代理机构 |
Sughrue Mion, PLLC |
代理人 |
Sughrue Mion, PLLC |
主权项 |
1. A method for manufacturing a nanostructure semiconductor light emitting device, the method comprising:
forming a mask having a plurality of openings on a base layer; growing a first conductivity-type semiconductor layer on exposed regions of the base layer such that the plurality of openings are filled, to form a plurality of nanocores; partially removing the mask such that side surfaces of the plurality of nanocores are exposed; sequentially growing an active layer and a second conductivity-type semiconductor layer on surfaces of the plurality of nanocores to form a plurality of light emitting nanostructures; forming a contact electrode on surfaces of the plurality of light emitting nanostructures, the contact electrode forming ohmic-contact with the second conductivity-type semiconductor layer; planarizing upper parts of the plurality of light emitting nanostructures such that upper surfaces of the nanocores are exposed; and partially removing the contact electrode such that the contact electrode has a height lower than upper surfaces of the light emitting nanostructures. |
地址 |
Suwon-si KR |