发明名称 |
Constant current generating circuit for semiconductor devices |
摘要 |
The constant current generating circuit includes a high resistance element for generating a very small current. This very small current is supplied to a first MOS transistor having a sufficiently large gate width to gate length ratio. The gate-source voltage of the first MOS transistor becomes its threshold voltage VTH, and the voltage applied across a resistance connected between the gate of the first MOS transistor and the ground line is set to a constant value VTH. Thus, a constant current is normally passed through the resistance. Since the very small current is supplied from the high resistance element which is normally turned on, regardless of the change of the power supply voltage, a constant current can be generated stably.
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申请公布号 |
US5391979(A) |
申请公布日期 |
1995.02.21 |
申请号 |
US19930135512 |
申请日期 |
1993.10.13 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
KAJIMOTO, TAKESHI;MIYAMOTO, TAKAYUKI |
分类号 |
G11C11/407;G05F3/24;G05F3/30;H03F1/30;H03F3/343;H03F3/345;(IPC1-7):G05F3/16 |
主分类号 |
G11C11/407 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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