| 摘要 |
PURPOSE:To provide a resist pattern formation method for forming a stable pattern favorably and a method for forming a reflection preventive film, even if the rest pattern is a fine one when forming the resist pattern on an optional base substrate, using the light of optional single wavelength as an exposure light source. CONSTITUTION:A reflection preventive film ARL constituted of a silicon oxide film (SixNy or SixNyHz) including nitrogen is grown directly or through other layer on a base substrate S. A photoresist PR is made directly or through another layer on the reflective preventive film ARL. A photoresist PR is exposed and a mask pattern is transcribed. As a reflective preventive film, it is desirable to form a reflective film not less than 1.2 and not more than 3.4 in reflection refraction factor and absorption refraction factor k not less than 0.16 and not more than 0.72 with 150-45nm in exposure wavelength, and not less than 10nm and hot more than 100nm in thickness. |
