发明名称 |
Non-volatile random access memory cell constructed of silicon carbide |
摘要 |
A non-volatile random access memory (NVRAM) cell that utilizes a simple, single-transistor DRAM cell configuration. The present NVRAM employs an enhancement mode nMOS transistor made as an accumulation mode transistor. The transistor has an n-type silicon carbide channel layer on a p-type silicon carbide buffer layer, with the channel and buffer layers being on a highly resistive silicon carbide substrate. The transistor also has n+ source and drain contact regions on the channel layer. A polysilicon/oxide/metal capacitor is preferably used which has a very low leakage current. Furthermore, this type of capacitor can be stacked on top of the transistor to save area and achieve high cell density. It is preferred to use a non-reentrant (edgeless) gate transistor structure to further reduce edge effects.
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申请公布号 |
US5510630(A) |
申请公布日期 |
1996.04.23 |
申请号 |
US19930138908 |
申请日期 |
1993.10.18 |
申请人 |
WESTINGHOUSE ELECTRIC CORPORATION |
发明人 |
AGARWAL, ANANT K.;SIERGIEJ, RICHARD R.;BRANDT, CHARLES D.;WHITE, MARVIN H. |
分类号 |
H01L21/82;H01L27/115;H01L29/24;H01L29/423;H01L29/78;(IPC1-7):H01L29/04;H01L29/48 |
主分类号 |
H01L21/82 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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