| 摘要 |
The image sensor and manufacturing method thereof are provided to improve the quality of the image sensor and to prevent the damage including a particle and crack by using the micro lens of the inorganic material. The image sensor comprises the unit pixel(20), the interlayer insulating film(30), the tetra etchyl orthor silicate layer(50), the color filter(60), the planarization layer(70), the micro lens(85), the inorganic material layer(90). The unit pixel is arranged in the semiconductor substrate(10). The interlayer insulating film comprises the metal wiring(31) and the pad(32) disposed on the semiconductor substrate. The tetra etchyl orthor silicate layer is formed on the interlayer insulating film in order to protect the pad. The color filter is formed on the tetra etchyl orthor silicate layer. The planarization layer is formed on the color filter. The micro lens is formed on the planarization layer and the micro lens is formed with the low-temperature oxide. The inorganic material layer is formed on the micro lens. The plasma treatment is performed on the micro lens to obtain the uniform surface.
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