发明名称 |
SILICON BASED FILMS FORMED FROM IODOSILANE PRECURSORS AND METHOD OF MAKING THE SAME |
摘要 |
A method for near atmospheric pressure chemical vapor deposition of a silicon based film onto a substrate includes introducing into a deposition chamber at about atmospheric pressure: (i) a substrate; (ii) an iodosilane precursor in the vapor state having at least three iodine atoms bound to silicon; and (iii) at least one reactant gas; and maintaining a deposition temperature within the chamber from about 250 DEG C to about 650 DEG C for a period of time sufficient to deposit a silicon based film on the substrate. Silicon based films formed by near atmospheric pressure chemical vapor deposition using an iodosilane precursor in a vapor state and methods for forming silicon-based films using ultraviolet assisted chemical vapor deposition are also included.
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申请公布号 |
WO9928529(A1) |
申请公布日期 |
1999.06.10 |
申请号 |
WO1998US24708 |
申请日期 |
1998.11.20 |
申请人 |
GELEST, INC.;THE RESEARCH FOUNDATION OF STATE UNIVERSITY OF NEW YORK |
发明人 |
ARKLES, BARRY, C.;KALOYEROS, ALAIN, E. |
分类号 |
C23C16/24;C23C16/32;C23C16/34;C23C16/40;C23C16/42;C23C16/48;(IPC1-7):C23C16/34 |
主分类号 |
C23C16/24 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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