Semiconductor device and its manufacturing method

摘要

To present a manufacturing method of semiconductor device capable of forming a homogeneous and highly reproducible gallium nitride crystal, comprising the steps of forming a zinc oxide layer on a monocrystalline substrate, forming a first gallium nitride crystal in a temperature range from 0 DEG C. to 900 DEG C., and forming a second gallium nitride crystal in a temperature range from 900 DEG C. to 2000 DEG C.