发明名称 |
PROCESS FOR FORMING A PLANAR DIODE USING ONE MASK |
摘要 |
A planar diode and method of making the same employing only one mask. The diode is formed by coating a substrate with an oxide, removing a central portion of the oxide to define a window through which dopants are diffused. The substrate is given a Ni/Au plating to provide ohmic contact surfaces, and the oxide on the periphery of the window is coated with a polyimide passivating agent overlying the P/N junction. |
申请公布号 |
EP1864331(A2) |
申请公布日期 |
2007.12.12 |
申请号 |
EP20060739574 |
申请日期 |
2006.03.24 |
申请人 |
VISHAY GENERAL SEMICONDUCTOR LLC |
发明人 |
WANG, BENSON;LU, KEVIN;CHIANG, WARREN;CHEN, MAX |
分类号 |
H01L29/74 |
主分类号 |
H01L29/74 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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