发明名称 PROCESS FOR FORMING A PLANAR DIODE USING ONE MASK
摘要 A planar diode and method of making the same employing only one mask. The diode is formed by coating a substrate with an oxide, removing a central portion of the oxide to define a window through which dopants are diffused. The substrate is given a Ni/Au plating to provide ohmic contact surfaces, and the oxide on the periphery of the window is coated with a polyimide passivating agent overlying the P/N junction.
申请公布号 EP1864331(A2) 申请公布日期 2007.12.12
申请号 EP20060739574 申请日期 2006.03.24
申请人 VISHAY GENERAL SEMICONDUCTOR LLC 发明人 WANG, BENSON;LU, KEVIN;CHIANG, WARREN;CHEN, MAX
分类号 H01L29/74 主分类号 H01L29/74
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