发明名称 Thin film transistor array panel and manufacturing method thereof
摘要 A TFT array panel includes: first and second gate members connected to each other; a gate insulating layer formed on the first and the second gate members; first and second semiconductor members formed on the gate insulating layer opposite the first and the second gate members, respectively; first and second source members connected to each other and located near the first and the second semiconductor members, respectively; first and second drain members located near the first and the second semiconductor members, respectively, and located opposite the first and the second source members with respect to the first and the second gate members, respectively; and a pixel electrode connected to the first and the second drain members. The first gate, semiconductor, source, and drain members form a first TFT, and the second gate, semiconductor, source, and drain members form a second TFT.
申请公布号 US7358124(B2) 申请公布日期 2008.04.15
申请号 US20060516187 申请日期 2006.09.06
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 TAK YOUNG-MI;BAEK SEUNG-SOO;YOUN JOO-AE;KIM DONG-GYU
分类号 G02F1/1368;H01L21/00;G02F1/136;G09F9/30;H01L21/336;H01L21/77;H01L21/84;H01L27/12;H01L29/786 主分类号 G02F1/1368
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