| 摘要 |
PROBLEM TO BE SOLVED: To provide a wafer dividing method, which can divide a wafer into individual devices without making spacing of streets larger, with respect to the wafer wherein a plurality of devices are formed on the surface of a semiconductor substrate by using a laminate body comprising an insulating film and a functional film. SOLUTION: In the wafer dividing method, the wafer is divided into individual devices by cutting with a cutting blade along the streets, with respect to the wafer wherein the devices formed on the surface of the semiconductor substrate by using the laminate body comprising the insulating film and the functional film, are formed by dividing by the streets. The method includes a laser processing groove forming step of irradiating with a laser beam formed into an annular shaped spot having the outside diameter larger than the width of the cutting blade and smaller than the width of the street along the street from the laminated body side of the wafer, to form a laser processing groove reaching the semiconductor substrate in the laminated body, and a cutting step of cutting the semiconductor substrate of the semiconductor wafer along the laser processing groove formed in the street by the cutting blade. COPYRIGHT: (C)2009,JPO&INPIT
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