| 摘要 |
The purpose of the present invention is to improve the thickness uniformity of the membrane of a substrate to be processed in the diametrical direction of an arrangement stand from the rotational center of the arrangement stand. A disclosed substrate processing device (10) comprises: an arrangement stand (14) arranging a substrate (W) and rotating around an axial line (X); an antenna (22a) installed in a first region (R1); and a reaction gas supply part for supplying reaction gas to the first region (R1). The reaction gas supply part has an inner-side spray hole (50b) and an outer-side spray hole (51b). The inner-side spray hole (50b) is arranged at a position nearer to the axial line (X) than the region of the antenna (22a) when seen in the direction of the axial line (X) and sprays the reaction gas in the direction of becoming more distant from the axial line (X). The outer-side spray hole (51b) is arranged at a position more distant from the axial line (X) than the region of the antenna (22a) when seen in the direction of the axial line (X) and sprays the reaction gas with a flow rate, which has been controlled independently of the flow rate of the reaction gas sprayed from the inner-side spray hole (50b), in the direction of approaching the axial line (X). |
