Magnetoresistive element and method for manufacturing the same

摘要

According to one embodiment, a magnetoresistive element is disclosed. The magnetoresistive element includes a reference layer. The reference layer includes a first region, and a second region provided outside the first region to surround the same. The second region contains an element contained in the first region and another element being different from the element. The magnetoresistive element further includes a storage layer, and a tunnel barrier layer provided between the reference layer and the storage layer. The storage layer is free from the another element.

主权项

1. A magnetoresistive element, comprising:
a reference layer comprising a first region, and a second region provided outside the first region to surround the first region, the second region containing an element contained in the first region and another element different from the element, wherein the another element is at least one element selected from the group consisting of As, Ge, Ga, Sb, In, N, Ar, He, O, Si, B, C, Zr, Tb, S, Se, P, and Ti; a storage layer which is free of the another element; and a tunnel barrier layer provided between the reference layer and the storage layer, wherein a width of the tunnel barrier layer and a width of the storage layer are larger than a width of the reference layer.