Memory cells, methods of operation and fabrication, semiconductor device structures, and memory systems

摘要

A magnetic cell core includes at least one stressor structure proximate to a magnetic region (e.g., a free region or a fixed region). The magnetic region may be formed of a magnetic material exhibiting magnetostriction. During switching, the stressor structure may be subjected to a programming current passing through the magnetic cell core. In response to the current, the stressor structure may alter in size. Due to the size change, the stressor structure may exert a stress upon the magnetic region and, thereby, alter its magnetic anisotropy. In some embodiments, the MA strength of the magnetic region may be lowered during switching so that a lower programming current may be used to switch the magnetic orientation of the free region. In some embodiments, multiple stressor structures may be included in the magnetic cell core. Methods of fabrication and operation and related device structures and systems are also disclosed.

主权项

1. A memory cell comprising:
a magnetic cell core extending vertically between a pair of neighboring electrodes between which a programming current is passable through the magnetic cell core, the magnetic cell core comprising:
a magnetic region; anda stressor structure vertically between the pair of neighboring electrodes and configured to vertically expand or vertically contract, relative to a neighboring material and responsive to an increase in temperature, to exert a vertical stress upon the magnetic region and to alter a magnetic anisotropy of the magnetic region when the stressor structure is subjected to the programming current passing through the magnetic cell core during switching of a magnetic orientation of the magnetic region.