Light emitting device and method for manufacturing the same

摘要

Provided are a light emitting device and a method for manufacturing the same. The light emitting device comprises a first conductive type semiconductor layer, an active layer, a second conductive type semiconductor layer, and a light extraction layer. The active layer is formed on the first conductive type semiconductor layer. The second conductive type semiconductor layer is formed on the active layer. The light extraction layer is formed on the second conductive type semiconductor layer. The light extraction layer has a refractive index smaller than or equal to a refractive index of the second conductive type semiconductor layer.

主权项

1. A light emitting device comprising:
a substrate; a light emitting structure on the substrate comprising:
a first conductive type semiconductor layer;an active layer on the first conductive type semiconductor layer; anda second conductive type semiconductor layer on the active layer; a first electrode on the first conductive type semiconductor layer; a second electrode on the second conductive type semiconductor layer; and a light extraction structure disposed above an edge area of the second conductive type semiconductor layer, wherein the second electrode is disposed on a top surface of the second conductive type semiconductor layer, wherein the light extraction structure is not disposed between the first electrode and the second electrode, wherein the light extraction structure includes a first wall, a second wall and a third wall, wherein at least two of the walls of the light extraction structure have an inner surface inclined at an acute angle, and wherein the second electrode comprises an electrode pad and a transparent electrode layer disposed between the electrode pad and the second conductive type semiconductor layer.