| 发明名称 |
Accumulation-mode field effect transistor with improved current capability |
| 摘要 |
An accumulation-mode field effect transistor including a plurality of gates. The accumulation-mode field effect transistor including a semiconductor region including a channel region adjacent to but insulated from each of the plurality of gates. |
| 申请公布号 |
US9368587(B2) |
申请公布日期 |
2016.06.14 |
| 申请号 |
US201414292894 |
申请日期 |
2014.05.31 |
| 申请人 |
Fairchild Semiconductor Corporation |
发明人 |
Kocon Christopher Boguslaw;Shenoy Praveen Muraleedharan |
| 分类号 |
H01L29/78;H01L29/40;H01L21/3065;H01L21/311;H01L21/683;H01L29/06;H01L29/423;H01L29/66;H01L29/739;H01L21/265;H01L23/495;H01L23/498;H01L29/10;H01L29/165;H01L29/417;H01L29/49;H02M3/00;H02M3/335;H02M7/48 |
主分类号 |
H01L29/78 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. An accumulation-mode field effect transistor, comprising:
a plurality of gates; a semiconductor region including a plurality of channel regions adjacent to but insulated from each of the plurality of gates, and a drift region, the plurality of channel regions and the drift region being of a first conductivity type; a drain terminal and a source terminal configured so that when the accumulation-mode field effect transistor is in the on state a current flows from the drain terminal to the source terminal through the drift region and the channel regions; and a plurality of insulation-filled trenches extending into the semiconductor region adjacent to the drift region, at least one sidewall of each insulation-filled trench being lined with silicon material of a second conductivity type opposite the first conductivity type. |
| 地址 |
South Portland ME US |
