| 发明名称 | Semiconductor device and manufacturing method thereof | ||
| 摘要 | A manufacturing method of a semiconductor device is provided. First, a mould is provided. The mould has a chamber, patterns in the chamber, and protrusions in the chamber. A carrier substrate having at least one die located thereon is disposed in the chamber, and the protrusions surround the die. A thermosetting material is injected into the chamber and is cured. The cured thermosetting material is separated from the mould, so as to form an interposer substrate. A plurality of through holes corresponding to the protrusions and a plurality of grooves corresponding to the patterns are formed on the interposer substrate. A conductive material is filled into the through holes and the grooves to form a plurality of conductive pillars and a first conductive pattern layer on a first surface of the interposer substrate. The first conductive pattern layer is electrically connected with the conductive pillars. | ||
| 申请公布号 | US9368475(B2) | 申请公布日期 | 2016.06.14 |
| 申请号 | US201514749644 | 申请日期 | 2015.06.25 |
| 申请人 | Industrial Technology Research Institute | 发明人 | Chen Shang-Chun;Lin Cha-Hsin;Ku Tzu-Kun |
| 分类号 | H01L21/00;H01L23/00;H01L21/768;H01L21/02;H01L21/56;H01L21/683;H01L21/78;H01L25/00;H01L25/065;H01L23/14;H01L23/498;H01L21/48;H01L23/538 | 主分类号 | H01L21/00 |
| 代理机构 | Jianq Chyun IP Office | 代理人 | Jianq Chyun IP Office |
| 主权项 | 1. A manufacturing method of a semiconductor device, comprising: providing a mould, wherein the mould has a chamber, a plurality of patterns in the chamber, and a plurality of protrusions in the chamber; disposing a carrier substrate having at least one die located thereon in the chamber, wherein the protrusions surround the die; injecting a thermosetting material into the chamber; curing the thermosetting material; separating the cured thermosetting material from the mould to form an interposer substrate, wherein a plurality of through holes corresponding to the protrusions is formed on the interposer substrate and a plurality of grooves corresponding to the patterns is formed on the interposer substrate, and a part of the through holes is connected with the grooves; and filling a conductive material into the through holes and the grooves to form a plurality of conductive pillars and a first conductive pattern layer on a first surface of the interposer substrate, wherein the first conductive pattern layer is electrically connected with the conductive pillars. | ||
| 地址 | Hsinchu TW | ||