| 摘要 |
PROBLEM TO BE SOLVED: To provide a thermal treatment apparatus and a thermal treatment method which radiate flash light to a substrate thereby uniformly heating the substrate.SOLUTION: A lower surface of a peripheral part of a semiconductor wafer W is supported by a support ring 71 placed on a cooling plate 72. The semiconductor wafer W is supported by the support ring 71 so that a surface where a resist film 11 is formed is located at a lower side. The support ring 71 is formed by a material such as a silicon carbide which is opaque for flush light. The flush light is radiated from a flush lamp FL to an upper surface (a rear surface) of the semiconductor wafer W supported by the support ring 71. Heat conduction occurs from the rear surface that a temperature is increased rapidly by flush light radiation to a front surface to heat the resist film 11. Further, the support ring 71 prevents the flush light from coming around the peripheral part on the surface of the semiconductor wafer W thereby enabling the semiconductor wafer W to be uniformly heated. |
