主权项 |
1. A layer transfer method for an optical device semiconductor material, comprising the steps of:
forming the optical device semiconductor material on a first substrate; depositing a metal stressor layer on top of the optical device semiconductor material, wherein the metal stressor layer is deposited to a thickness sufficient to permit mechanically-assisted spalling of the optical device semiconductor material to occur; attaching a first handle layer to the metal stressor layer; removing the optical device semiconductor material from the first substrate by pulling the first handle layer away from the first substrate and with it a stack comprising the metal stressor layer and the optical device semiconductor material; attaching a second handle layer to the optical device semiconductor material; removing the first handle layer from the stack; and forming a second substrate on the stressor layer, wherein the second substrate comprises a metal selected from the group consisting of: nickel, copper, silver, aluminum, zinc, tin, and combinations thereof. |