发明名称 Simplified Process for Vertical LED Manufacturing
摘要 Techniques for integrating spalling into layer transfer processes involving optical device semiconductor materials are provided. In one aspect, a layer transfer method for an optical device semiconductor material includes forming the optical device semiconductor material on a first substrate; depositing a metal stressor layer on top of the optical device semiconductor material; attaching a first handle layer to the metal stressor layer; removing the optical device semiconductor material from the first substrate by pulling the first handle layer away from the first substrate; attaching a second handle layer to the optical device semiconductor material; removing the first handle layer from the stack; and forming a second substrate on the stressor layer. Vertical LED devices and techniques for formation thereof are also provided.
申请公布号 US2016284928(A1) 申请公布日期 2016.09.29
申请号 US201514744602 申请日期 2015.06.19
申请人 International Business Machines Corporation 发明人 Bedell Stephen W.;Fogel Keith E.;Lauro Paul A.;Sadana Devendra K.
分类号 H01L33/00 主分类号 H01L33/00
代理机构 代理人
主权项 1. A layer transfer method for an optical device semiconductor material, comprising the steps of: forming the optical device semiconductor material on a first substrate; depositing a metal stressor layer on top of the optical device semiconductor material, wherein the metal stressor layer is deposited to a thickness sufficient to permit mechanically-assisted spalling of the optical device semiconductor material to occur; attaching a first handle layer to the metal stressor layer; removing the optical device semiconductor material from the first substrate by pulling the first handle layer away from the first substrate and with it a stack comprising the metal stressor layer and the optical device semiconductor material; attaching a second handle layer to the optical device semiconductor material; removing the first handle layer from the stack; and forming a second substrate on the stressor layer, wherein the second substrate comprises a metal selected from the group consisting of: nickel, copper, silver, aluminum, zinc, tin, and combinations thereof.
地址 Armonk NY US