ＧａＮベース半導体結晶成長用多結晶窒化アルミニウム基材およびそれを用いたＧａＮベース半導体の製造方法

摘要

There is provided a polycrystalline aluminum nitride base material having a linear expansion coefficient similar to GaN. The polycrystalline aluminum nitride base material as a substrate material for crystal growth of GaN-base semiconductors has a mean linear expansion coefficient of 4.9×10-6/K to 6.1×10-6/K between 20° C. and 600° C. and 5.5×10-6/K to 6.6×10-6/K between 20° C. and 1100° C.