Radiation detector

摘要

A radiation detector has a semiconductor substrate of a first conductivity type, a plurality of semiconductor regions of a second conductivity type making junctions with the semiconductor substrate, and a plurality of electrodes joined to the corresponding semiconductor regions. The electrodes cover the corresponding semiconductor regions, when viewed from a direction perpendicular to a first principal face. The semiconductor regions include a plurality of first and second semiconductor regions in a two-dimensionally array. The first semiconductor regions arrayed in a first direction in the two dimensional array out of the plurality of first semiconductor regions are electrically connected to each other, and the second semiconductor regions arrayed in a second direction intersecting with the first direction out of the plurality of second semiconductor regions are electrically connected to each other.

主权项

1. A radiation detector comprising:
a semiconductor substrate of a first conductivity type having first and second principal faces opposed to each other and generating carriers in response to incidence of radiation; a plurality of semiconductor regions of a second conductivity type which are two-dimensionally arrayed on the first principal face side of the semiconductor substrate, which make junctions with the semiconductor substrate, and into which carriers generated into the semiconductor substrate flow; a plurality of electrodes arranged corresponding to the respective semiconductor regions of the second conductivity type on the first principal face side of the semiconductor substrate and joined to the corresponding semiconductor regions of the second conductivity type; a plurality of first interconnections extending in the first direction and connecting the electrodes joined to the first semiconductor regions, to each other; and a plurality of second interconnections extending in the second direction and connecting the electrodes joined to the second semiconductor regions, to each other, wherein, when viewed from a direction perpendicular to the first principal face, the plurality of electrodes cover the respective semiconductor regions of the second conductivity type so that outer edges thereof are located outside outer edges of the corresponding semiconductor regions of the second conductivity type, wherein the plurality of semiconductor regions of the second conductivity type include a plurality of first semiconductor regions in a two-dimensional array and a plurality of second semiconductor regions in a two-dimensional array, wherein the first semiconductor regions arrayed in a first direction in the two-dimensional array out of the plurality of first semiconductor regions are electrically connected to each other through the first interconnection, wherein the second semiconductor regions arrayed in a second direction intersecting with the first direction out of the plurality of second semiconductor regions are electrically connected to each other through the second interconnection, wherein each section of the first interconnections connecting the electrodes adjacent in the first direction has a linear shape to linearly extend between the electrodes adjacent in the first direction, and wherein each section of the second interconnections connecting the electrodes adjacent in the second direction has a linear shape to linearly extend between the electrodes adjacent in the second direction.