发明名称 Array substrate and manufacturing method thereof, display panel and display apparatus
摘要 The present invention provides an array substrate and a manufacturing method thereof, a display panel and a display apparatus. The array substrate comprises: a base substrate; and a pixel region and a periphery region formed on the base substrate, wherein the periphery region is located around the pixel region, the pixel region comprises an amorphous silicon thin film transistor, and the periphery region comprises a low temperature poly-silicon structure. As the a-Si thin film transistor is used in the pixel region of the array substrate, the problem that there is a too large leakage current in the pixel region of the LTPS array substrate in the prior art is overcome, the leakage current in the pixel region is reduced, while as the LTPS structure is used in the periphery region of the array substrate, a narrow frame of the display panel and the display apparatus may be achieved.
申请公布号 US9508757(B2) 申请公布日期 2016.11.29
申请号 US201314389115 申请日期 2013.12.02
申请人 BOE TECHNOLOGY GROUP CO., LTD.;BEIJING BOE OPTOELECTRONICS TECHNOLOGY GROUP CO., LTD. 发明人 Li Yue;Dong Xue;Xue Hailin;Chen Xiaochuan
分类号 H01L29/04;H01L27/14;H01L33/00;H01L23/62;H01L27/12;H01L21/02;H01L29/66;H01L29/786 主分类号 H01L29/04
代理机构 Nath, Goldberg & Meyer 代理人 Nath, Goldberg & Meyer ;Goldberg Joshua B.
主权项 1. An array substrate comprising: a base substrate; and a pixel region and a periphery region formed on the base substrate, wherein the periphery region is located around the pixel region, the pixel region comprises an amorphous silicon thin film transistor, the periphery region comprises a low temperature poly-silicon structure, and the low temperature poly-silicon structure in the periphery region includes a p-type thin film transistor and an n-type thin film transistor connected with each other, wherein a p-type doped pattern of the p-type thin film transistor is directly in contact with an n-type doped pattern of the n-type thin film transistor, and a gate of the p-type thin film transistor and a gate of the n-type thin film transistor are independent of each other.
地址 Beijing CN