Strained channel dynamic random access memory devices

摘要

DRAM trench capacitors formed by, inter alia, deposition of conductive material into a trench or doping the semiconductor region in which the trench is defined.

主权项

1. A structure comprising:
a memory cell comprising:
a capacitor disposed in a recess, the recess extending at least partially in a semiconductor substrate; andan access transistor electrically coupled to the capacitor, a channel of the access transistor being disposed in a strained layer, the strained layer being over a relaxed layer, the relaxed layer being over the semiconductor substrate.