| 发明名称 | Metal gate structure of a CMOS semiconductor device | ||
| 摘要 | A semiconductor device includes a substrate comprising an isolation region surrounding a P-active region and an N-active region. The semiconductor device also includes an N-metal gate electrode comprising a first metal composition over the N-active region. The semiconductor device further includes a P-metal gate electrode. The P-metal gate electrode includes a bulk portion over the P-active region and an endcap portion over the isolation region. The endcap portion includes the first metal composition. The bulk portion includes a second metal composition different from the first metal composition. | ||
| 申请公布号 | US9508721(B2) | 申请公布日期 | 2016.11.29 |
| 申请号 | US201514733038 | 申请日期 | 2015.06.08 |
| 申请人 | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. | 发明人 | Zhu Ming;Young Bao-Ru;Chuang Harry Hak-Lay |
| 分类号 | H01L29/76;H01L27/092;H01L21/8238;H01L29/06 | 主分类号 | H01L29/76 |
| 代理机构 | Hauptman Ham, LLP | 代理人 | Hauptman Ham, LLP |
| 主权项 | 1. A semiconductor device comprising: a substrate comprising an isolation region surrounding a P-active region and an N-active region; an N-metal gate electrode comprising a first metal composition over the N-active region; and a P-metal gate electrode comprising a bulk portion over the P-active region and an endcap portion over the isolation region, an entirety of the endcap portion comprising the first metal composition and the bulk portion comprising a second metal composition different from the first metal composition, wherein the bulk portion and the endcap portion do not overlap and an inner sidewall of the endcap portion is substantially aligned with a sidewall of the isolation region. | ||
| 地址 | TW | ||