Semiconductor device and manufacturing method thereof

摘要

It is an object of the present invention to provide a peeling method that causes no damage to a layer to be peeled and to allow not only a layer to be peeled with a small surface area but also a layer to be peeled with a large surface area to be peeled entirely. Further, it is also an object of the present invention to bond a layer to be peeled to various base materials to provide a lighter semiconductor device and a manufacturing method thereof. Particularly, it is an object to bond various elements typified by a TFT, (a thin film diode, a photoelectric conversion element comprising a PIN junction of silicon, or a silicon resistance element) to a flexible film to provide a lighter semiconductor device and a manufacturing method thereof.

主权项

1. A method of manufacturing a display device, comprising the steps of:
forming a metal layer over a substrate; forming an oxide layer in contact with the metal layer; forming a layer having a light-emitting element over the oxide layer; forming a metal oxide layer by oxidizing the metal layer; bonding a support to the layer; and separating the layer from the substrate within the metal oxide layer or at an interface between the metal oxide layer and the oxide layer.