Sidewall image templates for directed self-assembly materials

摘要

In one example, a method includes forming a template having a plurality of elements above a process layer and forming spacers on sidewalls of the plurality of elements. Portions of the process layer are exposed between adjacent spacers. At least one of the plurality of elements is removed. A mask structure is formed from a directed self-assembly material over the exposed portions. The process layer is patterned using at least the mask structure as an etch mask.

主权项

1. A method, comprising:
forming a template having a plurality of elements above a process layer; forming spacers on sidewalls of said plurality of elements; removing at least a first element of said plurality of elements to expose at least a first portion of said process layer beneath said first element and between a first pair of adjacent spacers; forming a mask structure from a directed self-assembly material over said first exposed portion and between said first pair of adjacent spacers; and patterning said process layer using at least said mask structure as an etch mask.