| 摘要 |
A quantum dot light emitting diodes display is provided. The quantum dot light emitting diodes display comprises a first electrode, a hole injection layer, a hole transmission layer, a quantum dot light emitting layer, an electron transporting layer, and a second electrode. The quantum dot light emitting layer comprises a plurality of pixel units including red sub-pixels, green sub-pixels, and blue sub-pixels. At least one color of the sub-pixels of the pixel units is formed by mixing at least two quantum dots with different peak emission wavelengths corresponding to different colors. |
| 主权项 |
1. A quantum dot light emitting diodes display, comprising:
a base substrate; a switch array layer, disposed on the base substrate, comprising a plurality of thin film transistors; a first electrode, disposed on the switch array layer; a hole injection layer, disposed on the first electrode; a hole transmission layer, disposed on the hole injection layer; a quantum dot light emitting layer, disposed on the hole transmission layer, comprising a plurality of pixel units including red sub-pixels, green sub-pixels, and blue sub-pixels, each sub-pixel of the pixel unit being driven by one of the thin film transistors; an electron transporting layer, disposed on the quantum dot light emitting layer; a second electrode, disposed on the electron transporting layer; and an encapsulation layer, disposed on the second electrode and bonded with the base substrate by an adhesive; wherein at least one color of the sub-pixels of the red sub-pixels, the green sub-pixels, and the blue sub-pixels is formed by mixing at least two quantum dots having different peak emission wavelengths corresponding to the color. |
