| 发明名称 |
NONLINEAR DIELECTRIC STACK CIRCUIT ELEMENT |
| 摘要 |
A nonlinear dielectric stack circuit element includes a first layer of material having a first dielectric constant; a second layer of material having a second dielectric constant; and a third layer of material sandwiched between the first layer of material and the second layer of material and having a third dielectric constant. The third dielectric constant has a value less than the first dielectric constant and the second dielectric constant. |
| 申请公布号 |
US2016351802(A1) |
申请公布日期 |
2016.12.01 |
| 申请号 |
US201415111515 |
申请日期 |
2014.01.30 |
| 申请人 |
HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP |
发明人 |
Jackson Warren;Gibson Gary;Williams R. Stanley;Yang Jianhua |
| 分类号 |
H01L45/00;G11C13/00 |
主分类号 |
H01L45/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A nonlinear dielectric slack circuit element comprising:
a first layer of material having a first dielectric constant; a second layer of material having a second dielectric constant; and a third layer of material sandwiched between the first layer of material and the second layer of material and having a third dielectric constant, the third dielectric constant having a value less than the first dielectric constant and the second dielectric constant. |
| 地址 |
Houston TX US |
