| 发明名称 |
DRY ETCH METHOD FOR TEXTURING SILICON AND DEVICE |
| 摘要 |
A method for texturing silicon includes loading a silicon wafer into a vacuum chamber, heating the silicon wafer and thermal cracking a gas to generate cracked sulfur species. The silicon wafer is exposed to the cracked sulfur species for a time duration in accordance with a texture characteristic needed for a surface of the silicon wafer. |
| 申请公布号 |
US2016351734(A1) |
申请公布日期 |
2016.12.01 |
| 申请号 |
US201514747954 |
申请日期 |
2015.06.23 |
| 申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
Gershon Talia S.;Haight Richard A.;Kim Jeehwan;Lee Yun Seog |
| 分类号 |
H01L31/0236;H01L31/18;H01L31/036 |
主分类号 |
H01L31/0236 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for texturing silicon, comprising:
loading a silicon wafer into a vacuum chamber; heating the silicon wafer; thermal cracking a gas to generate cracked sulfur species; and exposing the silicon wafer to the cracked sulfur species for a time duration in accordance with a texture characteristic needed for a surface of the silicon wafer. |
| 地址 |
Armonk NY US |
