发明名称 |
METHOD FOR MANUFACTURING INSULATED GATE TYPE SWITCHING DEVICE, AND INSULATED GATE TYPE SWITCHING DEVICE |
摘要 |
A method is provided for manufacturing an insulated gate type switching device. The method includes: implanting second conductivity type impurities into a surface of a semiconductor substrate so as to form a second region of a second conductivity type in the surface; forming a third region of the second conductivity type having a second conductivity type impurity density lower than the second region on the surface by epitaxial growth: and forming a trench gate electrode. |
申请公布号 |
US2016351680(A1) |
申请公布日期 |
2016.12.01 |
申请号 |
US201415114461 |
申请日期 |
2014.10.06 |
申请人 |
SOENO Akitaka;TAKEUCHI Yuichi;SOEJIMA Narumasa |
发明人 |
SOENO Akitaka;TAKEUCHI Yuichi;SOEJIMA Narumasa |
分类号 |
H01L29/66;H01L29/78;H01L29/423;H01L29/739;H01L29/10;H01L29/16 |
主分类号 |
H01L29/66 |
代理机构 |
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代理人 |
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主权项 |
1. A method of manufacturing an insulated gate type switching device, the method comprising:
implanting second conductivity type impurities into a surface of a semiconductor substrate including a first region of a first conductivity type so as to form a second region of a second conductivity type in a range in the semiconductor substrate that is exposed on the surface; forming a third region of the second conductivity type on the surface by epitaxial growth after the formation of the second region, the third region having a second conductivity type impurity density lower than a second conductivity type impurity density in the second region; forming a fourth region of the first conductivity type being in contact with the third region and separated from the first region by the second and third regions; and forming a trench gate electrode facing the second and third regions via an insulating film. |
地址 |
Toyota-shi JP |